Журнал Российского общества по неразрушающему контролю и технической диагностике
The journal of the Russian society for non-destructive testing and technical diagnostic
 
| Русский Русский | English English |
 
Главная Archive
18 | 11 | 2024
2018, 03 March

DOI: 10.14489/td.2018.03.pp.058-063

 

Barsukov V. K., Sibgatullin B. I.
QUALITY CONTROL OF TANTALUM CHIP CAPACITORS BY USING SURGE CURRENT TEST
(pp. 58-63)

Abstract. The surge current method for testing tantalum capacitors as a way to increase their reliability in circuits with low resistance is proposed. The method is based on well-known test methods, regulated by international standards. Particular attention is paid to the parameters of the test bench. In particular, the resistance of the test bench is limited to the range in which changes of the inductance of the circuit and the parameters of the test capacitors have a minimal effect on the test conditions. The inductance of the test bench is maintained at a level at which the transients during the tests are aperiodic. Tests of the pilot batch of tantalum chip capacitors have been carried out. All capacitors that passed the surge current test were found to be suitable for longterm fail-safe tests. The proposed methodology can be included in the standards and specifications for capacitors. Surge current tests should be part of a set of technological measures to monitor the quality of tantalum capacitors.

Keywords: tantalum capacitor, surge current tests, reliability, reproducibility of tests, transient processes.

V. K. Barsukov, B. I. Sibgatullin (Kalashnikov Izhevsk State Technical University, Izhevsk, Russia) E-mail:  Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра.  

 

1. Kuznetsov P. L., Murav'ev V. V. (2015). Quality inspection of electrolytic tantalum capacitors using a stress test. Pribory i metody izmerenii, (1), pp. 76-80. [in Russian language]
2. Kuznetsova V. A., Murav'ev V. V. (2016). Method of accelerated tests for persistence of tantalum chip capacitor. Kontrol'. Diagnostika, (7), pp. 57-60. doi: 10.14489/td.2016.07.pp.057-060 [in Russian language]
3. Beliaeva E. A., Murav'ev V. V. (2016). The effect of the anode porosity and anodizing methods modification on the wet tantalum capacitors quality. Kontrol'. Diagnostika, (3), pp. 62 – 70. doi: 10.14489/td.2016.03.pp.062-070 [in Russian language]
4. Kuznetsova V. A., Murav'ev V. V. (2016). Forecasting the retentivity of tantalum oxide semiconductor chip capacitors in time dependence. Vestnik IzhGTU im. M. T. Kalashnikova, (4), pp. 69-72. [in Russian language]
5. Beliaeva E. A., Murav'ev V. V. (2015). Controlling the production of tantalum capacitors with liquid electrolyte by monitoring the operational output of suitable product. Vestnik IzhGTU im. M. T. Kalashnikova, (2), pp. 72-75. [in Russian language].
6. Kuznetsova V. A., Murav'ev V. V. (2014). Influence of the design characteristics of the anode on the operational parameters of oxide-semiconductor tantalum chip capacitors. Vestnik IzhGTU im. M. T. Kalashnikova, (4), pp. 105-107. [in Russian language].
7. Kuznetsova V. A., Murav'ev V. V. (2014). Effect of the quality of the housing of oxide-semiconductor tantalum chip capacitors on the operational parameters. Intellektual'nye sistemy v proizvodstve, (2), pp. 112-115. [in Russian language]
8. Beliaeva E. A., Murav'ev V. V. (2014). Influence of the variable sinusoidal component of the pulsating voltage upon oxidation of volumetric porous anodes of tantalum capacitors on electrical parameters. Intellektual'nye sistemy v proizvodstve, (2), pp. 96-102. [in Russian language]
9. Kuznetsova V. A., Kuznetsov P. L., Murav'ev V. V. (2013). Study of the reliability of tantalum oxide semiconductor chip capacitors on the basis of experimental data. Vestnik IzhGTU im. M. T. Kalashnikova, (3), pp. 88-91. [in Russian language]
10. Kuznetsova V. A., Kuznetsov P. L., Beliaeva E. A., Murav'ev V. V. (2013). Study of the influence of the materials of tantalum oxide semiconductor chip capacitors on the performance characteristics. Intellektual'nye sistemy v proizvodstve, (2), pp. 140-143. [in Russian language]
11. Mattingly D. (1995). Increasing reliability of SMD tantalum capacitors in low impedance applications. AVX technical paper.
12. Mogilevsky B. S., Surge G. (1986). Current failure in solid electrolyte tantalum capacitors. IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 9(4), pp. 475-479.
13. Teverovsky A. (2007). Effect of compressive stresses on performance and reliability of chip tantalum capacitors. CARTS Europe. (pp. 175-190). 29 okt. – 1 nov. 2007. Barcelona, Spain.
14. Sibgatullin B. I. (2015). Effect of circuit resistance and inductance on surge current testing of tantalum capacitors with different capacitance. International Forum “Instrumentation Engineering, Electronics and Telecommunications”. (pp. 163-170). 25 – 27 nov. 2015.
15. Barsukov V. K., Sibgatullin B. I. (2015). Test bench for tantalum capacitors with pulse current. Intellektual'nye sistemy v proizvodstve, (3), pp. 63-66. [in Russian language].

 

 

This article  is available in electronic format (PDF).

The cost of a single article is 350 rubles. (including VAT 18%). After you place an order within a few days, you will receive following documents to your specified e-mail: account on payment and receipt to pay in the bank.

After depositing your payment on our bank account we send you file of the article by e-mail.

To order articles please copy the article doi:

10.14489/td.2018.03.pp.058-063

and fill out the  form  

 

 

 
Search
Rambler's Top100 Яндекс цитирования