2021, 07 July |
DOI: 10.14489/td.2021.07.pp.024-033 Artemiev B. V., Artemyev I. B., Vlasov A. I.. Zhalnin V. P. Abstract. The article discusses some methods and means of automated control of memristive structures, which are currently very promising elements for creating new memory devices, as well as neural networks. A review of the literature on this topic is carried out. The description of the measuring complex developed by the authors is given. The measuring complex was used to measure the electrical parameters of the memristor structures. Experimental data are presented, which made it possible to propose a modification of the memristor structure in order to increase the stability of its operation. Keywords: characteristic measurement, memristor, smart systems, probe stations, nanometer structure.
B. V. Artemiev, I. B. Artemyev, A. I. Vlasov, V. P. Zhalnin (Bauman Moscow State Technical University, Moscow, Russia) E-mail: Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. , Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. , Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. , Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра.
1. Gudkov A., Gogin A., Kik M. et al. (2014). Memristors - a new type of resistive memory elements for nanoelectronics. Elektronika NTB, (9), pp. 156 – 162. [in Russian language]
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