10.14489/td.2016.07.pp.057-060

2016, 07 July

DOI: 10.14489/td.2016.07.pp.057-060

Kuznetsova V.A., Murav'ev V.V.
METHOD OF ACCELERATED TESTS FOR PERSISTENCE OF TANTALUM CHIP CAPACITOR
(pp. 57-60)

Abstract. The article deals with the developed method of accelerated testing the tantalum chip capacitors on the persistence through the effects of increased ambient temperature without application of electrical loads. The results of accelerated tests correspond to real changes in the parameters of capacitors in the conditions of heated storage. The developed methodology is based on accelerated testing the capacitors. It is designed to confirm the persistence requirements laid down in regulatory documents. Accelerated tests for persistence in conditions of heated storage simulate annual cycles by thermal ageing. The capacitors placed in the heat chamber with the set temperature, the maximum allowable for capacitors aged over time, is the year of aging in heated storage. Accelerated testing the capacitors for persistence is performed in climatic chambers providing controlled temperature and humidity, and simulate the storage capacitors in a heated storage. The main parameters (the criteria of validity capacitors – capacitance, tangent of loss angle, leakage current) are measured before testing. The control of capacitance change tangent of the loss angle, leakage current are measured after testing. During the accelerated tests, the aging tantalum oxide layer on the anode of the capacitor was studied by thermal influence on the capacitor without applying voltage to it. The simulated result of aging tantalum capacitors demonstrated a change in its electrical parameters.

Keywords: tantalum solid-electrolyte chip-capacitors, persistence, method, high temperature environment.

+ - About the Authors Click to collapse

V. A. Kuznetsova (Open Joint-Stock Company “Elecond”, Sarapul, Russia) E-mail: Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра.
V. V. Murav'ev (Kalashnikov Izhevsk State Technical University, Izhevsk, Russia)

+ - References Click to collapse

1. Kuznetsova V. A., Kuznetsov P. L., Murav'ev V. V. (2013). Study of reliability of tantalum oxide semiconductor chip capacitors based on experimental data. Vestnik Izhevskogo gosudarstvennogo tekhnicheskogo universiteta, (3), pp. 88-91. [in Russian language]
2. Kuznetsov P. L., Kuznetsova V. A., Lomaev G. V. (2014). Study of the influence of the characteristics of manufacturing technological process on the variations of the performance of tantalum volume-porous capacitors in time. Vestnik Izhevskogo gosudarstvennogo tekhnicheskogo universiteta, (1), pp. 11-15. [in Russian language]
3. Kuznetsova V. A., Kuznetsov P. L., Beliaeva E. A., Murav'ev V. V. (2013). Studying the effect on the performance of the materials quality of tantalum oxide-semiconductor-chip capacitors. Intellektual'nye sistemy v proizvodstve, (2), pp. 140-143. [in Russian language]
4. Beliaeva E. A., Kuznetsova V. A., Murav'ev V. V. (2014). Study of the influence of storage time on the performance and status of the volume-porous tantalum capacitors. Intellektual'nye sistemy v proizvodstve, (1), pp. 96-99. [in Russian language]
5. Sibgatullin B. I., Barsukov V. K. (2015). Calculation and simulation of transient processes during the test of tantalum capacitors with pulse current. Intellektual'nye sistemy v proizvodstve, (1), pp. 115 – 120. [in Russian language]
6. Iurlova M. S., Grigor'ev E. G., Olevskii E. A., Demeniuk V. D. (2014). Electropulse consolidation of tantalum anodes for electrolytic capacitors. Fizika i khimiia obrabotki materialov, (5), pp. 82-90. [in Russian language].

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