10.14489/td.2015.06.pp.030-034

2015, 06 June

DOI: 10.14489/td.2015.06.pp.030-034

Kostrin D. K.
RESEARCH OF THE SPECTRAL CONTROL METHOD OF SEMICONDUCTOR AND DIELECTRIC FILMS THICKNESS
(pp. 30-34)

Abstract. It is dealt with the basics of the spectral interferometry method which allows to monitor a thickness of semiconductor and dielectric films. The halogen glow lamp with stabilized emissive power is used for measurements of spectral coefficient of reflection of films. Its radiation goes to the multiplexed light fiber named collector. It consists of two separate bundles which are weaved together at one end. The need is stressed to employ mathematical processing of the spectral data for receiving of truthful results. Data handling by polynomial filters are considered rather effective. Determination of thickness of several samples of films of silicon carbide on a silicon substrate is carried out. It is defined the main disadvantages of the considered method of measurement and ways for its solution. Attention is drawn to use of a source of radiation which consists of a set of light-emitting diodes covering all spectral range. Also, application of an advanced measurement technique with observation of ranges of reflection in case of different angles of the falling radiation is considered.

Keywords: thin films, monitoring of thickness, spectral interferometry, optic spectrometer.

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D. K. Kostrin
Saint Petersburg Electrotechnical University “LETI” (ETU), Saint Petersburg, Russia. E-mail: Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра.

+ - References Click to collapse

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