Журнал Российского общества по неразрушающему контролю и технической диагностике
The journal of the Russian society for non-destructive testing and technical diagnostic
 
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08 | 09 | 2024
2024, 07 July

DOI: 10.14489/td.2024.07.pp.046-053

Kharlamov N. R., Riabyshenkov A. S., Karakeyan V. I.
A SYSTEMATIC APPROACH TO ASSESSING THE ENVIRONMENTAL SAFETY OF A HIGH-TECH NATURAL AND TECHNICAL GEOSYSTEM
(pp. 46-53)

Abstract. The practical application of system analysis procedures to the development of a methodology for assessing the level of environmental safety of a high-tech natural and technical geosystem (HNTG) is proposed. Using the structural scheme of material flows, it is shown that the ecological state of the HNTG is formed by microelectronics industries, vehicle and life support systems of the city, and the main anthropogenic load falls on the atmosphere. The factors determining the environmental safety of HNTG are presented in the form of a «tree» of causes of safety violations, and the priority of their consequences is determined by the method of expert assessments. It is determined that emissions from microelectronics industries are of the greatest importance for the ecological state of HNTG, which allows limiting the effect of the methodology by assessing the level of environmental safety of the atmosphere. It should contain criteria and indicators for evaluating all internal and external anthropogenic loads of the atmosphere of the HNTG in accordance with the structural target model – the tree of assessments and follow the hierarchy of tasks in the form of a tree of goals. Pollutants from microelectronics production exceeding the environmental technology intensity of HNTG require special attention to the assessment of their safety and the nature of their distribution in the atmosphere.

Keywords: system analysis procedures, environmental safety, pollutants, block diagram of material flows, technogenic load, expert assessment method, environmental technology intensity.

N. R. Kharlamov, A. S. Riabyshenkov, V. I. Karakeyan (National Research University of Electronic Technology, Moscow, Zelenograd, Russia) E-mail: Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. , Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. , Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра.  

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