10.14489/td.2026.11.pp.065-071

2026, 11 November

DOI: 10.14489/td.2026.11.pp.065-071

Smirnov V. I., Sergeev V. A., Gavrikov A. A., Kuzmin N. P.
DIAGNOSTICS OF MOUNTING DEFECTS IN ACTIVE ELEMENTS OF ELECTRONIC MODULES AND MICROSYSTEMS BY THERMAL IMPEDANCE
(pp. 65-71)

Abstract. Using a microassembly prototype containing 8 pairs of IRL7486M DirectFETME MOSFET transistors mounted on a printed circuit board with artificially introduced soldering defects of varying sizes, this study demonstrates the feasibility of detecting and qualitatively estimating defect sizes based on measurements of the MOSFET transistors' junction-to-board thermal impedance component. The thermal impedance components of the microassembly prototype's active elements were measured with an error of no more than 5 % using a modulation method implemented in a transient thermal response and thermal impedance measurement unit, part of a hardware and software system for quality control of electronic module and microassembly assembly, developed as part of a project supported by the Russian Science Foundation in the field of Microelectronics. Given the specific connection of the MOSFET transistors in the microassembly prototype, the active elements were heated by passing harmonic-pulse-modulated heating current pulses through an antiparallel diode. It was found that a 10 % reduction in the soldered contact area of the MOSFET with the printed circuit board leads to a disproportionate increase in the junction-to-board thermal resistance component by 30 %. This is explained by partial heat dissipation via the conductive metallization and the specific heating method used for the active elements, which involves passing the heating current through the antiparallel diode rather than the MOSFET.

Keywords: microassembly, MOSFET, mounting defects, thermal impedance, frequency dependence, measurement, junction-to-board thermal resistance.

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V. I. Smirnov, V. A. Sergeev, A. A. Gavrikov (Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, Ulyanovsk, Russia) E-mail: Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. , Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра. , Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра.
N. P. Kuzmin (Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, Ulyanovsk, Russia, Ulyanovsk State Technical University, Ulyanovsk, Russia) E-mail: Данный адрес e-mail защищен от спам-ботов, Вам необходимо включить Javascript для его просмотра.

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DOI: 10.14489/td.2026.11.pp.065-071

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